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| SDT96305 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) FEATURES * Low saturation voltages. * High current gain at 40A. (20 Typ.) * Hermetic metal package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. APPLICATIONS * High power switching circuits. * Switching regulators. * Motor drive controls. TO3 (TO-204AA) Pin 1 - Base Pin 2 - Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IC IB(PK) Ptot Tstg RJC Collector - Base Voltage (IE = 0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range Thermal Resistance Junction to Case 275V 250V 10V 50A 70A 10A 15A 175W -65 to +200C 1.0CW Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document 5746 Issue 1 SDT96305 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions IB = 0 IE = 0 IC = 0 IE = 0 TC = 150C IC = 40A IC = 50A IC = 40A IC = 1.0A f = 1MHz IE = 0 f = 1MHz VCC = 100V IC = 20A IB1 = IB2 = 2.0A tp = 10s VBC = 10V VCE = 10V VCE = 10V IB = 8A IB = 8A VCE = 10V 8 5 1.5 2.0 Min. 250 275 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS VCEO(sus)* Collector - Emitter Sustaining Voltage IC = 200mA V(BR)CBO V(BR)EBO ICBO hFE* VCE(sat)* VBE(sat)* Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current DC Current Gain IC = 100A IE = 100A VCB = 200V V 10 250 40 A -- V Collector - Emitter Saturation Voltage IC = 40A Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS ft Cob ton ts tf Transition Frequency Output Capacitance Turn On Time Storage Time Fall Time 10 600 1.0 2.5 0.6 MHz pF s * Pulse test tp = 300s , < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document 5746 Issue 1 |
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